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| AP2R803GJB Parameter Specifications | | Model: | AP2R803GJB | Package: | TO-251S | Channel: | N-channel | | VDS(V): | 30V | VGS(±V): | 20V | IDS(A): | 75A | | RDS(ON)(mΩ): | 2.8mΩ | VGS(th)(max V): | 3V | Ciss(pF): | 2800/4480pF | | Qg(nC): | 28/45nC | Brand: | APEC 富鼎 | Origin: | China Taiwan |
Trench type power MOS tube field effect tube super junction MOS tube POWER MOSFET Super Junction MOSFET brand agent Shenzhen original authentic electronic components supplier spot AP2R803GJB Parameter Specifications Data Sheet PDF Download View PDF ( Tips: Some browsers may open the file directly instead of downloading. This requires you to use the right-click menu “Save Target As...” at the download location. ) 
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